TS32MSD64V3F5 Transcend 256MB DDR SDRAM Memory Module

The TS32MSD64V3F5 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR333.The TS32MSD64V3F5 consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS32MSD64V3F5 is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

General Information
Manufacturer	Transcend Information, Inc
Manufacturer Part Number	TS32MSD64V3F5
Manufacturer Website Address	http://www.transcend-info.com
Brand Name	Transcend
Product Name	256MB DDR SDRAM Memory Module
Product Type	RAM Module
Technical Information
Memory Size	256 MB
Memory Technology	DDR SDRAM
Number of Modules	1 x 256MB
Memory Speed	333 MHz
Memory Standard	DDR-333/PC-2700
Error Checking	Non-ECC
Signal Processing	Unbuffered
CAS Latency	CL2.5
Physical Characteristics
Number of Pins	200-pin
Thickness	30 mil
Width	1.3"
Length	2.7"

The TS32MSD64V3F5 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR333.The TS32MSD64V3F5 consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS32MSD64V3F5 is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• RoHS compliant products.
• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V
• Max clock Freq: 166MHZ.
• Double-data-rate architecture; two data transfers per clock cycle
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transition with CK transition
• Auto and Self Refresh 7.8us refresh interval.
• Data I/O transactions on both edge of data strobe.
• Edge aligned data output, center aligned data input.
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
  CAS Latency (Access from column address) : 2.5
  Burst Length (2, 4, 8)
  Data Sequence (Sequential & Interleave)

Technology	DDR RAM
Capacity	256 MB
Bus Clock	333 MHz
Form Factor	SO DIMM 200-pin
Warranty	Lifetime

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